complementary output hall effect latch ah276 1 nov. 2009 rev. 1. 4 bcd semiconductor manufacturing limited data sheet general description the ah276 is an integrated hall sensor with output driver designed for electronic commutation of brush- less dc motor applications. the device includes an on- chip hall sensor for magnetic sensing, an amplifier that amplifies the hall voltage, a schmitt trigger to provide switching hysteresis for noise rejection, a tem- perature compensation circuit to compensate the tem- perature drift of ha ll sensitivity and two complementary open-collect or drivers for sinking large load current. it also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits. placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold b op , the pin do will be turned low (on) and pin dob will be turned high (off). this output state is held until the magnetic flux density reverses and falls below b rp, then causes do to be tu rned high (off) and dob turned low (on). ah276 is available in to-94 (sip-4l) package. features on-chip hall sensor 3.5v to 16v supply voltage 350ma (avg) output sink current reversed supply voltage protection build in over temperature protection function -20 o c to 85 o c operating temperature low profile to-94 (sip-4l) package esd rating: 300v (machine model) applications dual-coil brushless dc motor dual-coil brushless dc fan revolution counting speed measurement figure 1. package type of ah276 to-94
complementary output hall effect latch ah276 2 nov. 2009 rev. 1. 4 bcd semiconductor manufacturing limited data sheet figure 2. pin configuration of ah276 (front view) (to-94) pin configuration z4 package gnd dob do v cc pin description pin number pin name function 1 v cc supply voltage 2 do output 1 3 dob output 2 4 gnd ground 1 2 3 4
complementary output hall effect latch ah276 3 nov. 2009 rev. 1. 4 bcd semiconductor manufacturing limited data sheet functional block diagram figure 3. functional block diagram of ah276 package temperature range part number marking id packing type lead free green lead free green to-94 -20 to 85 o c AH276Z4-AE1 ah276z4-ag1 ah276z4-e1 ah276z4-g1 bulk ah276z4-be1 ah276z4-bg1 ah276z4-e1 ah276z4-g1 bulk ah276z4-ce1 ah276z4-cg1 ah276z4-e1 ah276z4-g1 bulk ordering information circuit type package z4: to-94 (sip-4l) e1: lead free ah276 - magnetic characteristics a: 10 to 50gauss b: 5 to 70gauss c: 100gauss regulator temperature compensation hall sensor amplifier schmitt trigger output driver do dob v cc gnd 1 2 3 4 over temperature protection g1: green bcd semiconductor's pb-free products, as design ated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green package.
complementary output hall effect latch ah276 4 nov. 2009 rev. 1. 4 bcd semiconductor manufacturing limited data sheet parameter symbol value unit supply voltage v cc 20 v reverse protection voltage v rcc -20 v magnetic flux density b unlimited gauss output current continuous i o 350 ma hold 550 ma peak (start up) 750 ma power dissipation p d 550 mw thermal resistance die to atmosphere ja 227 o c/w die to package case jc 49 o c/w storage temperature t stg -50 to 150 o c esd (machine model) 300 v esd (human body model) 2500 v note 1: stresses greater than those li sted under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the de vice at these or any other conditions beyond t hose indicated under "recommended operating c onditions" is not implied. "a bsolute maximum ratings" for extended period may affect device reliability. parameter symbol min max unit supply voltage v cc 3.5 16 v ambient temperature t a -20 85 o c recommended operating conditions absolute maximum ratings (note 1) (t a =25 o c) (t a =25 o c)
5 nov. 2009 rev. 1. 4 bcd semiconductor manufacturing limited data sheet complementary output hall effect latch ah276 parameter symbol test condition min typ max unit output saturation voltage v sat v cc =3.5v, i o =100ma 0.3 v i o =350ma 0.35 0.6 v output leakage current i ol v ce =16v 0.1 10 a supply current i cc v cc =16v, output open 12 16 ma output rise time tr r l =820 ? , c l =20pf 3.0 10 s output fall time tf r l =820 ? , c l =20pf 0.3 1.5 s switch time differential ? tr l =820 ? , c l =20pf 3.0 10 s output zener breakdown voltage v z 55 v thermal protection temperature tsd 178 o c thermal protection hysteresis ? tsd 40 o c (t a =25 o c, v cc =14v, unless otherwise specified) electrical characteristics parameter symbol grade min typ max unit operating point b op a10 50gauss b 5 70 gauss c 100 gauss releasing point b rp a-50 -10gauss b -70 -5 gauss c -100 gauss hysteresis b hys 75 gauss magnetic characteristics (t a =25 o c) v do (v) high low b hys v sat 0 s n b rp b op off-state on-state turn off turn on magnetic flux density (gauss)
complementary output hall effect latch ah276 6 nov. 2009 rev. 1. 4 bcd semiconductor manufacturing limited data sheet figure 4. basic test circuit magnetic characteristics (continued) n s marking side figure 5. v do vs. magnetic flux density figure 6. v dob vs. magnetic flux density -40 -20 0 20 40 2 4 6 8 10 12 14 16 dob (v) v sat v cc magnetic flux density b (gauss) -40 -20 0 20 40 2 4 6 8 10 12 14 16 do (v) v sat v cc magnetic flux density b (gauss) ah276 v cc do dob gnd 12 3 4 +14v do (v out1 ) dob (v out2 ) r1 r2 820 ? 820 ? c1 c2 20pf 20pf
7 nov. 2009 rev. 1. 4 bcd semiconductor manufacturing limited data sheet complementary output hall effect latch ah276 typical performance characteristics figure 9. b op /b rp /b hys vs. ambient temperature figure 8. b op /b rp /b hys vs. v cc figure 10. p d vs. ambient temperature figure 7. i cc vs. v cc -25 0 25 50 75 100 125 150 0 200 400 600 800 p d (mw) t a ( o c) 4 6 8 101214161820 -80 -60 -40 -20 0 20 40 60 80 100 b op b rp b hys ta=25 o c b op /b rp /b hys (gauss) v cc (v) -20 0 20 40 60 80 -50 -25 0 25 50 75 b op b rp b hys t a =+25 o c b op /b rp /b hys (gauss) t a ( o c) 2 4 6 8 10 12 14 16 18 20 5 6 7 8 9 10 11 12 13 14 ta=-25 o c ta=-0 o c ta=+25 o c ta=+85 o c i cc (ma) v cc (v)
complementary output hall effect latch ah276 8 nov. 2009 rev. 1. 4 bcd semiconductor manufacturing limited data sheet typical applications figure 12. typical application circuit typical performance characteristics (continued) figure 11. i cc vs. ambient temperature figure 12. v sat vs. ambient temperature ah276 v cc do dob gnd 12 3 4 coil1 coil2 r1 470 r2 470 c1 2.2 p f v cc d1 c2 2.2 p f + + -20 0 20 40 60 80 100 200 300 400 500 600 5 i o =100ma i o =200ma i o =300ma i o =350ma i o =400ma v sat (mv) t a ( o c) -20 0 20 40 60 80 6 8 10 12 14 v cc =3.5v v cc =14v v cc =20v i cc (ma) t a ( o c)
9 nov. 2009 rev. 1. 4 bcd semiconductor manufacturing limited data sheet complementary output hall effect latch ah276 mechanical dimensions unit: mm(inch) to-94 package sensor location 3.780( 0.149) 4.080( 0.161) 0.500(0.020) 0.700(0.028) 1.520(0.059) 1.720(0.067) 0.700(0.028) 0.900(0.035) 0.360(0.014) 0.510(0.020) 4.980(0.196) 5.280(0.208) 1.250(0.050) 1.850(0.073) 0.380(0.015) 0.550(0.022) 0.360(0.014) 0.500(0.020) 14.000(0.550) 15.300(0.602) 1.270(0.050) typ 3.710(0.146) 3.910(0.154) 45 typ 3.450(0.136) 3.750(0.148) (for hall ic)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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